TPCC8061-H transistor equivalent, field effect transistor.
(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 3.5 nC (typ.) Low drain-source on-resistance: RDS(ON) = 21 mΩ (typ.) (VGS = 4.5 .
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2. Features
(1) (2) (3) (4) (5) (6) Sma.
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