TPCC8069 - MOSFET

Product Overview

Toshiba

Part number	TPCC8069
Manufacturer	Toshiba
File Size	237.32 KB
Description	MOSFET
Datasheet	TPCC8069 Datasheet
Additional preview pages of the TPCC8069 datasheet.

(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 6.5 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipat.

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Published: Aug 29, 2014 |