TPCC8136 mosfet equivalent, silicon p-channel mosfet.
(1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max).
* Power Management Switches
2. Features
(1) Small footprint due to a small and thin package (2) Low drain-source on-.
Image gallery
Download