TPCP8511 - Silicon NPN Transistor

Product Overview

Toshiba

Part number	TPCP8511
Manufacturer	Toshiba
File Size	183.09 KB
Description	Silicon NPN Transistor
Datasheet	TPCP8511 Datasheet
Additional preview pages of the TPCP8511 datasheet.

(1) High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (2) Low collector-emitter saturation: VCE(sat) = 0.18 V(max)(IB = 33 mA) (3) High-speed switching: tf = 38 ns(typ. ) 3. Packaging and Internal Circuit TPCP8511 PS-8 1. Collector 5. Emitter 2. Collector 6. Collector 3. Collector 7. Collector 4. Base 8. Collector 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage VCBO 100 V V.

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Published: Jan 30, 2024 |