TPCP8511 transistor equivalent, silicon npn transistor.
(1) High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (2) Low collector-emitter saturation: VCE(sat) = 0.18 V(max)(IB = 33 mA) (3) High-speed switching: tf = 38 ns(typ..
* High-Speed Switching
* DC-DC Converters
* Photo Flashes
2. Features
(1) High DC current gain: hFE = 250 to.
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