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TPCP8511 - Silicon NPN Transistor

Key Features

  • (1) High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (2) Low collector-emitter saturation: VCE(sat) = 0.18 V(max)(IB = 33 mA) (3) High-speed switching: tf = 38 ns(typ. ) 3. Packaging and Internal Circuit TPCP8511 PS-8 1. Collector 5. Emitter 2. Collector 6. Collector 3. Collector 7. Collector 4. Base 8. Collector 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage VCBO 100 V V.

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Datasheet Details

Part number TPCP8511
Manufacturer Toshiba
File Size 183.09 KB
Description Silicon NPN Transistor
Datasheet download datasheet TPCP8511 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Bipolar Transistors Silicon NPN Epitaxial Type TPCP8511 1. Applications • High-Speed Switching • DC-DC Converters • Photo Flashes 2. Features (1) High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (2) Low collector-emitter saturation: VCE(sat) = 0.18 V(max)(IB = 33 mA) (3) High-speed switching: tf = 38 ns(typ.) 3. Packaging and Internal Circuit TPCP8511 PS-8 1. Collector 5. Emitter 2. Collector 6. Collector 3. Collector 7. Collector 4. Base 8. Collector 4.