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TOSHIBA Transistor Silicon PNP Diffused Type
TPCP8604
TPCP8604
High-Voltage Switching Applications
High breakdown voltage: VCEO = −400 V
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
−400
V
Collector-emitter voltage
VCEO
−400
V
Emitter-base voltage
VEBO
−7
V
Collector current
DC (Note 1)
IC
Pulse(Note 1)
ICP
−0.3 A
−1
Base current
IB
−0.25
A
Collector power dissipation
t=10s
−2.2
PC (Note 2)
W
DC
−1.1
Junction temperature
Tj
−150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Ensure that the junction temperature does not exceed 150°C.
Note 2: Device mounted on a 25.4mm x 25.4mm x 1.
TPCP8604 Datasheet
