• Part: TPD7106F
  • Description: 1-channel High-Side N channel Power MOSFET Gate Driver
  • Category: MOSFET
  • Manufacturer: Toshiba
  • Size: 622.12 KB
Download TPD7106F Datasheet PDF
Toshiba
TPD7106F
TPD7106F is 1-channel High-Side N channel Power MOSFET Gate Driver manufactured by Toshiba.
Description TPD7106F is a 1channel high-side N channel power MOSFET gate driver. This IC contains a charge pump circuit, allowing easy configuration of a high-side switch for large-current applications. 2. Applications - Junction Boxes for Automotive. - Power distribution modules for Automotive. - Semiconductor relays. SSOP16-P-225-0.65B 3. Features - AEC-Q100 qualified. - Built in the charge pump circuit (Charge pump capacitor is external). - Output current is -10m A / +400m A, and the drive by parallel use of N channel power MOSFET is possible. - Built in the protection for reverse connection of power supply. - Built in the diagnosis output for under voltage of Charge pump circuit. - SSOP16 package for surface mounting. Note: Due to its MOS structure. This product is sensitive to static electricity. © 2019 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2020-03 2020-01-16 4. Block Diagram -+ VBAT 12V CP1- VDD1 CP_GND Logic Logic VDD1 CP2- CP_GND CP1 VDD STBY VDD1 VREG Logic CP2 CPV OUT1 Driver IN1 Logic OSC OUT2 IN2...