TPD7211F Datasheet | Toshiba

Features z Power MOSFET gate driver for half-bridge z High-side can operate P channel MOSFET, Low-side can operate N channel MOSFET z Housed in the PS-8 package and supplied in embossed carrier tape. Pin Assignment (top view) IN1 1 STBY 2 IN2 3 8 OUT1 7 VDD 6 N.C Marking SON8-P-0303-0.65 Weight: 0.017g (typ.) Part No. (or abbreviation code) 7211F Lot No. GND 4 （TOP VIEW） 5 OUT2 - - on the lower left of the marking indicates Pin 1 - Weekly code: (Three digits) Week of manufacture (01 for first week of year, continuing up to 52 or 53) Year of manufacture (The last digit of the calendar year) Please contact your TOSHIBA sales representative for details as to environmental matters such as the Ro HS patibility of Product. The Ro HS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain This product has a MOS structure and is sensitive electrostatic discharge. Start of mercial production 2011-04 2013-11-01 Block Diagram / Application Circuit 250kΩ STBY Regulator 100k Ω 100kΩ IN1 100kΩ IN2 150k Ω Logic 150k Ω Level shift Level shift 50k Ω 50k Ω VBATT OUT1 P channel Power MOSFET Motor N channel Power...