* (1) High-speed switching (2) Small gate charge : QSW = 19 nC (typ.) (3) Small output charge : Qoss = 51 nC (typ.) (4) Low drain-source on-resistance : RDS(ON) =1.9 mΩ (typ.)(VGS = 10 V ) (5) Low leakage current : IDSS = 10 µA (max)(VDS = 60 V ) (6) Enhancement mode : Vth = 1.5 to 2.5 V (VDS = 10 V,
TPH2R506PL Datasheet (714.85 KB)
TPH2R506PL
714.85 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H) TPH2R506PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators .
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