* (1) High-speed switching (2) Small gate charge: QSW = 13 nC (typ.) (3) Small output charge: Qoss = 24 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID =
TPH3R003PL Datasheet (465.87 KB)
TPH3R003PL
465.87 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H) TPH3R003PL 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators .
📁 Related Datasheet
TPH3R203NL Silicon N-channel MOSFET (Toshiba)
TPH3R506PL Silicon N-channel MOSFET (Toshiba)
TPH3R704PL Silicon N-channel MOSFET (Toshiba)
TPH3R70APL Silicon N-channel MOSFET (Toshiba)
TPH3006PD GaN Power Low-loss Switch (Transphorm)
TPH3006PS GaN Power Low-loss Switch (Transphorm)
TPH3202L 600V GaN FET (Transphorm)
TPH3202P 600V GaN FET (Transphorm)
TPH3205ESBET 650V GaN FET (Transphorm)
TPH3205WS 600V Cascode GaN FET (Transphorm)
