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TPH7R006PL - Silicon N-channel MOSFET

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 6.2 nC (typ. ) (3) Small output charge: Qoss = 20 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 5.4 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPH7R006PL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial pro.

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Datasheet Details

Part number TPH7R006PL
Manufacturer Toshiba
File Size 476.14 KB
Description Silicon N-channel MOSFET
Datasheet download datasheet TPH7R006PL Datasheet

Full PDF Text Transcription for TPH7R006PL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TPH7R006PL. For precise diagrams, and layout, please refer to the original PDF.

MOSFETs Silicon N-channel MOS (U-MOS-H) TPH7R006PL 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators • Motor Drivers 2. Features (1) High...

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rs • Switching Voltage Regulators • Motor Drivers 2. Features (1) High-speed switching (2) Small gate charge: QSW = 6.2 nC (typ.) (3) Small output charge: Qoss = 20 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 5.4 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPH7R006PL SOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2016-10 2019-10-18 Rev.2.0 TPH7R006PL 4.

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