900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

TPHR6503PL Datasheet

Silicon N-channel MOSFET

No Preview Available !

MOSFETs Silicon N-channel MOS (U-MOS-H)
TPHR6503PL
1. Applications
• High-Efficiency DC-DC Converters
• Switching Voltage Regulators
2. Features
(1) High-speed switching
(2) Small gate charge: QSW = 30 nC (typ.)
(3) Small output charge: Qoss = 81.3 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 0.41 m(typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
TPHR6503PL
SOP Advance
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
©2016 Toshiba Corporation
1
Start of commercial production
2015-11
2016-07-22
Rev.2.0


Toshiba Electronic Components Datasheet

TPHR6503PL Datasheet

Silicon N-channel MOSFET

No Preview Available !

TPHR6503PL
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 30 V
Gate-source voltage
(Note 1)
VGSS
±20
Drain current (DC)
(Tc = 25 )
(Note 2)
ID
150 A
Drain current (DC)
(Silicon limit) (Note 2), (Note 3)
ID
393 A
Drain current (pulsed)
(t = 100 µs)
(Note 2)
IDP
500 A
Power dissipation
(Tc = 25 )
PD 170 W
Power dissipation
(Note 4)
PD
3.0 W
Power dissipation
(Note 5)
PD
0.96 W
Single-pulse avalanche energy
(Note 6)
EAS
374 mJ
Single-pulse avalanche current
(Note 6)
IAS
120 A
Channel temperature
Tch 175
Storage temperature
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
(Tc = 25 )
Channel-to-ambient thermal resistance
(Ta = 25 )
(Note 4)
Channel-to-ambient thermal resistance
(Ta = 25 )
(Note 5)
Note 1: +20V /-16V ensured at DC condition.
-20V ensured at pulse condition(duty 5%).
Note 2: Ensure that the channel temperature does not exceed 175 .
Note 3: Limited by silicon chip capability. Package limit is 150 A.
Note 4: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 5: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 6: VDD = 24 V, Tch = 25 (initial), L = 0.02 mH, IAS = 120 A
Symbol
Rth(ch-c)
Rth(ch-a)
Rth(ch-a)
Max Unit
0.88 /W
50
156
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2016 Toshiba Corporation
2
2016-07-22
Rev.2.0


Part Number TPHR6503PL
Description Silicon N-channel MOSFET
Maker Toshiba
Total Page 10 Pages
PDF Download

TPHR6503PL Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 TPHR6503PL Silicon N-channel MOSFET
Toshiba





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy