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Toshiba Electronic Components Datasheet

TPHR8504PL Datasheet

Silicon N-channel MOSFET

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MOSFETs Silicon N-channel MOS (U-MOS-H)
TPHR8504PL
1. Applications
• High-Efficiency DC-DC Converters
• Switching Voltage Regulators
• Motor Drivers
2. Features
(1) High-speed switching
(2) Small gate charge: QSW = 23 nC (typ.)
(3) Small output charge: Qoss = 85.4 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 0.7 m(typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
TPHR8504PL
SOP Advance
1, 2, 3: Source
4: Gate
5, 6, 7, 8: Drain
©2016 Toshiba Corporation
1
Start of commercial production
2014-06
2016-10-19
Rev.3.0


Toshiba Electronic Components Datasheet

TPHR8504PL Datasheet

Silicon N-channel MOSFET

No Preview Available !

TPHR8504PL
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS 40 V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Tc = 25 ) (Note 1), (Note 2)
ID
150 A
Drain current (DC)
(Silicon limit) (Note 1), (Note 2)
ID
340 A
Drain current (pulsed)
(t = 100 µs)
(Note 1)
IDP
500 A
Power dissipation
(Tc = 25 )
PD 170 W
Power dissipation
(Note 3)
PD
3.0 W
Power dissipation
(Note 4)
PD
1.0 W
Single-pulse avalanche energy
(Note 5)
EAS
336 mJ
Single-pulse avalanche current
(Note 5)
IAS
120 A
Channel temperature
Tch 175
Storage temperature
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance
(Tc = 25 )
Channel-to-ambient thermal resistance
(Ta = 25 )
(Note 3)
Channel-to-ambient thermal resistance
(Ta = 25 )
(Note 4)
Note 1: Ensure that the channel temperature does not exceed 175 .
Note 2: Limited by package limit. Silicon chip capability is 340 A. (Tc = 25 )
Note 3: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 4: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 5: VDD = 32 V, Tch = 25 (initial), L = 18 µH, IAS = 120 A
Symbol
Rth(ch-c)
Rth(ch-a)
Rth(ch-a)
Max Unit
0.88 /W
50
142
Fig. 5.1 Device Mounted on a Glass-Epoxy
Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy
Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2016 Toshiba Corporation
2
2016-10-19
Rev.3.0


Part Number TPHR8504PL
Description Silicon N-channel MOSFET
Maker Toshiba
Total Page 9 Pages
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