* (1) High-speed switching (2) Small gate charge: QSW = 6.5 nC (typ.) (3) Small output charge: Qoss = 21.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, I
TPN12008QM Datasheet (490.57 KB)
TPN12008QM
490.57 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H) TPN12008QM 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators .
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