TPN12008QM mosfet equivalent, silicon n-channel mosfet.
(1) High-speed switching (2) Small gate charge: QSW = 6.5 nC (typ.) (3) Small output charge: Qoss = 21.1 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (t.
* High-Efficiency DC-DC Converters
* Switching Voltage Regulators
* Motor Drivers
2. Features
(1) High-speed.
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