TPN12008QM - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TPN12008QM
Manufacturer	Toshiba
File Size	490.57 KB
Description	Silicon N-Channel MOSFET
Datasheet	TPN12008QM Datasheet
Additional preview pages of the TPN12008QM datasheet.

(1) High-speed switching (2) Small gate charge: QSW = 6.5 nC (typ. ) (3) Small output charge: Qoss = 21.1 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 9.6 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN12008QM TSON Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2019-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial.

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Published: Jan 31, 2024 |