TPN1600ANH - MOSFETs

Product Overview

Toshiba

Part number	TPN1600ANH
Manufacturer	Toshiba
File Size	229.31 KB
Description	MOSFETs
Datasheet	TPN1600ANH Datasheet
Additional preview pages of the TPN1600ANH datasheet.

(1) (2) (3) (4) (5) (6) Small, thin package High-speed switching Small gate charge: QSW = 7.4 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Drain-source voltage Gate-so.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Aug 29, 2014 |