TPN4R303NL Datasheet Silicon N-channel MOSFET

Manufacturer: Toshiba

Datasheet Details

MOSFETs Silicon N-channel MOS (U-MOS-H) TPN4R303NL 1.

Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2.

(1) High-speed switching (2) Small gate charge: QSW = 3.9 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 5.1 mΩ (typ. ) (VGS = 4.5 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit TPN4R303NL 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source vol.