Datasheet4U Logo Datasheet4U.com

TPN6R303NC - MOSFET

Features

  • (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 5.2 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pul.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPN3021 TRIPOLAR OVERVOLTAGE PROTECTION STMicroelectronics
TPNA0505S 1W 3KVDC Isolated Dual Output DC/DC Converters TOPPOWER
TPNA0509S 1W 3KVDC Isolated Dual Output DC/DC Converters TOPPOWER
TPNA0512S 1W 3KVDC Isolated Dual Output DC/DC Converters TOPPOWER
TPNA0515S 1W 3KVDC Isolated Dual Output DC/DC Converters TOPPOWER

Other Datasheets by Toshiba

Part Number Description
TPN6R003NL MOSFET
TPN11003NL MOSFETs
TPN11006NL MOSFET
TPN11006PL Silicon N-channel MOSFET
TPN1110ENH Silicon N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPN6R303NC MOSFETs Silicon N-channel MOS (U-MOS) TPN6R303NC 1. Applications • • Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 5.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4.
Published: |