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TPN6R303NC Datasheet, Toshiba

TPN6R303NC mosfet equivalent, mosfet.

TPN6R303NC Avg. rating / M : 1.0 rating-11

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TPN6R303NC Datasheet

Features and benefits

(1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 5.2 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement .

Application


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* Lithium-Ion Secondary Batteries Power Management Switches 2. Features (1) (2) (3) (4) Small, thin package L.

Image gallery

TPN6R303NC Page 1 TPN6R303NC Page 2 TPN6R303NC Page 3

TAGS

TPN6R303NC
MOSFET
Toshiba

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