TPW1500CNH - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TPW1500CNH
Manufacturer	Toshiba
File Size	373.74 KB
Description	Silicon N-Channel MOSFET
Datasheet	TPW1500CNH Datasheet
Additional preview pages of the TPW1500CNH datasheet.

(1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 13 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 150 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPW1500CNH DSOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2015-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-06 2019-10-30 Rev.4.0 TPW1500C.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Jan 31, 2024 |