* (1) High-speed switching (2) Small gate charge: QSW = 28 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 2.0 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit T
TPW2R508NH Datasheet (434.39 KB)
TPW2R508NH
434.39 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H) TPW2R508NH 1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators .
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