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TSB3055 Datasheet, Toshiba

TSB3055 transistor equivalent, silicon npn transistor.

TSB3055 Avg. rating / M : 1.0 rating-19

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TSB3055 Datasheet

Features and benefits

. Convenient MOLD Package : Useless Insulation Bushing . High Gain at High Current : hFE=20~100 @ V CE=4V, I C=4A . Low Saturation Voltage : VC E(sat)

Application

FEATURES . Convenient MOLD Package : Useless Insulation Bushing . High Gain at High Current : hFE=20~100 @ V CE=4V.

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TSB3055 Page 1 TSB3055 Page 2

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