TSB3055 transistor equivalent, silicon npn transistor.
. Convenient MOLD Package : Useless Insulation Bushing
. High Gain at High Current
: hFE=20~100
@ V CE=4V, I C=4A
. Low Saturation Voltage
: VC E(sat)
FEATURES
. Convenient MOLD Package : Useless Insulation Bushing
. High Gain at High Current
: hFE=20~100
@ V CE=4V.
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