. Convenient MOLD Package : Useless Insulation Bushing
. High Gain at High Current
: hFE=20~100
@ V CE=4V, I C=4A
. Low Saturation Voltage
: VC E(sat).
Full PDF Text Transcription for TSB3055 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
TSB3055. For precise diagrams, and layout, please refer to the original PDF.
SILICON NPN TRIPLE DIFFUSED TYPE TSB3055 GENERAL PURPOSE TRANSISTOR POWER REGULATOR, SWITCHING AND SOLENOID Unit in mm 15.9MAX. 032±Q2 DRIVE APPLICATIONS. FEATURES . Conv...
View more extracted text
OLENOID Unit in mm 15.9MAX. 032±Q2 DRIVE APPLICATIONS. FEATURES . Convenient MOLD Package : Useless Insulation Bushing . High Gain at High Current : hFE=20~100 @ V CE=4V, I C=4A . Low Saturation Voltage : VC E(sat)<l-lV @ IC=4A, IB=0.4A MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage SYMBOL VcBO VCEO RATING 80 80 UNIT w < m I2.0 ±U3 +0.30 I 1.0-0.2 5 5.45±U2 CO-H 5.
TSB3055 Datasheet
