Bipolar Transistors Silicon NPN Epitaxial Type
TTC1949
1. Applications
• Low-Frequency Power Amplifiers
2. Packaging and Internal Circuit
TTC1949
1. Base
2. Emitter
3. Collector
S-Mini
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Base current
IB
50
mA
Collector power dissipation
(Note 1)
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
- 55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 0.42 mm2 × 3)
©2017-2018
Toshiba Electronic Devices & Storage Corporation
1
Start of commercial production
2017-06
2018-05-28
Rev.1.0
