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Bipolar Transistors Silicon NPN Triple-Diffused Type
TTC5460B
1. Applications
• Dynamic Focus • High-Voltage Switching • High-Voltage Amplifiers
2. Features
(1) High collector voltage : VCEO = 800 V
3. Packaging and Internal Circuit (Note)
TTC5460B
1. Emitter 2. Collector 3. Base
TO-126N
Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts.
©2016 Toshiba Corporation
1
Start of commercial production
2014-02
2016-02-05 Rev.1.0
TTC5460B
4.
TTC5460B Datasheet
