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Toshiba Electronic Components Datasheet

TTC5460B Datasheet

Silicon NPN Transistor

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Bipolar Transistors Silicon NPN Triple-Diffused Type
TTC5460B
1. Applications
• Dynamic Focus
• High-Voltage Switching
• High-Voltage Amplifiers
2. Features
(1) High collector voltage : VCEO = 800 V
3. Packaging and Internal Circuit (Note)
TTC5460B
1. Emitter
2. Collector
3. Base
TO-126N
Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation
voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical
isolation from surrounding parts.
©2016 Toshiba Corporation
1
Start of commercial production
2014-02
2016-02-05
Rev.1.0


Toshiba Electronic Components Datasheet

TTC5460B Datasheet

Silicon NPN Transistor

No Preview Available !

TTC5460B
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
800
V
Collector-emitter voltage
VCEO
800
Emitter-base voltage
VEBO
5
Collector current (DC)
(Note 1)
IC
50
mA
Collector current (pulsed)
(Note 1)
ICP
100
Base current
IB
25
Collector power dissipation
PC
1.5
W
Collector power dissipation
(Tc = 25 )
PC
10
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150 .
5. Electrical Characteristics
5.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VCB = 640 V, IE = 0 A
VEB = 5 V, IC = 0 A
VCE = 5 V, IC = 7 mA
IC = 20 mA, IB = 4 mA
IC = 20 mA, IB = 4 mA
Min Typ. Max Unit
1
µA
0.1
15
1
V
1.3
5.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Collector output capacitance
Transition frequency
Symbol
Test Condition
Cob
VCB = 100 V, IE = 0 A, f = 1 MHz
fT
VCE = 10 V, IC = 3 mA
Min Typ. Max Unit
2.2
pF
5.5
MHz
©2016 Toshiba Corporation
2
2016-02-05
Rev.1.0


Part Number TTC5460B
Description Silicon NPN Transistor
Maker Toshiba
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TTC5460B Datasheet PDF






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