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TTK101MFV
For ECM
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
TTK101MFV
Application for compact ECM Thin package: 0.5mm Low capacitance: Ciss = 1.8 pF (typ.) @VDS = 2 V, VGS = 0, f = 1MHz Low noise: VN = 15 mV (typ.)
@VDD=2 V, RK=1kΩ, Cg=10pF, GV=80dB, A-Cuve Filter
Absolute Maximum Ratings (Ta=25°C)
Characteristic
Symbol
Rating
Unit
Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range
VGDO
-20
V
IG
10
mA
PD (Note 1)
150
mW
Tj
125
°C
Tstg
−55 to 125
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
TTK101MFV Datasheet
