XK1R9F10QB Datasheet - Toshiba

XK1R9F10QB, Silicon N-channel MOSFET

XK1R9F10QB-Toshiba.pdf

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Datasheet Details

Part number:

XK1R9F10QB

Manufacturer:

Toshiba ↗

File Size:

661.44 KB

Description:

Silicon N-channel MOSFET

XK1R9F10QB Features

* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.6 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit XK1R9F10QB TO-220SM(W) 1: Gate 2: Drain (Hea

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XK1R9F10QB Stock/Price

Toshiba America Electronic Components

XK1R9F10QB,LXGQ

Transistor MOSFET N-Channel 100V 160A 3-Pin TO-220SM - Tape and Reel (Alt: XK1R9F10QB,LXGQ)

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