* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.6 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit XK1R9F10QB TO-220SM(W) 1: Gate 2: Drain (Hea
XK1R9F10QB Datasheet (661.44 KB)
XK1R9F10QB
661.44 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS -H) XK1R9F10QB 1. Applications Automotive Switching Voltage Regulators DC-DC Co.
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