* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 9.8 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (5) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.2 mA) 3. Packaging and Internal Circuit XPN12006NC TSON Adva
XPN12006NC Datasheet (560.33 KB)
XPN12006NC
560.33 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H) XPN12006NC 1. Applications Automotive Switching Voltage Regulators DC-DC Conver.
📁 Related Datasheet
XPN1300ANC Silicon N-Channel MOSFET (Toshiba)
XPN19014MC Silicon P-Channel MOSFET (Toshiba)
XPN3R804NC Silicon N-Channel MOSFET (Toshiba)
XPN6R706NC N-channel MOSFET (Toshiba)
XPN7R104NC Silicon N-Channel MOSFET (Toshiba)
XPN9R614MC Silicon P-Channel MOSFET (Toshiba)
XP-C LED (CREE)
XP-E2 LED (Cree)
XP-G2 LEDs (Cree)
XP-G3 LEDs (Cree)
