* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 14.4 mΩ (typ.) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (5) Enhancement mode: Vth = -1.0 to -2.1 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit XPN19014MC T
XPN19014MC Datasheet (692.08 KB)
XPN19014MC
692.08 KB
Silicon p-channel mosfet.
MOSFETs Silicon P-Channel MOS (U-MOS ) XPN19014MC 1. Applications Automotive Switching Voltage Regulators DC-DC Conv.
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