XPN9R614MC - Silicon P-Channel MOSFET

Product Overview

Toshiba

Part number	XPN9R614MC
Manufacturer	Toshiba
File Size	585.65 KB
Description	Silicon P-Channel MOSFET
Datasheet	XPN9R614MC Datasheet
Additional preview pages of the XPN9R614MC datasheet.

(1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 7.4 mΩ (typ. ) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (5) Enhancement mode: Vth = -1.0 to -2.1 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit XPN9R614MC TSON Advance(WF) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2018-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2018-09 2021-12-08 Rev.6.0 XPN9R614MC 4. Ab.

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Published: Jan 31, 2024 |