* (1) AEC-Q101 qualified (2) Small, thin package (3) Low drain-source on-resistance: RDS(ON) = 7.4 mΩ (typ.) (VGS = -10 V) (4) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (5) Enhancement mode: Vth = -1.0 to -2.1 V (VDS = -10 V, ID = -0.5 mA) 3. Packaging and Internal Circuit XPN9R614MC TS
XPN9R614MC Datasheet (585.65 KB)
XPN9R614MC
585.65 KB
Silicon p-channel mosfet.
MOSFETs Silicon P-Channel MOS (U-MOS ) XPN9R614MC 1. Applications Automotive Switching Voltage Regulators DC-DC Conv.
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