* (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 0.23 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit XPQR3004PB 1: Gate 9: Drain (heatsink) 2 to
XPQR3004PB Datasheet (628.05 KB)
XPQR3004PB
628.05 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS -H) XPQR3004PB 1. Applications Automotive Switching Voltage Regulators Motor Dr.
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