Datasheet Summary
MOSFETs Silicon N-channel MOS (U-MOS- -H)
1. Applications
- Automotive
- Switching Voltage Regulators
- Motor Drivers
- DC-DC Converters
2. Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 0.23 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
1: Gate 9: Drain (heatsink) 2 to 8: Source
L-TOGLTM Note: L-TOGLTM is a trademark of Toshiba Electronic Devices & Storage Corporation.
©2023
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2022-10
2023-06-09 Rev.4.0
4....