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015AZ2.4 - Silicon Diode

This page provides the datasheet information for the 015AZ2.4, a member of the 015AZ2.0 Silicon Diode family.

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Datasheet Details

Part number 015AZ2.4
Manufacturer Toshiba Semiconductor
File Size 160.49 KB
Description Silicon Diode
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015AZ2.0~015AZ12 TOSHIBA Diode Silicon Epitaxial Planar Type 015AZ2.0~015AZ12 Constant Voltage Regulation Applications Unit: mm l Small package l Nominal voltage tolerance about ±2.5% (2.0V~12V) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Power dissipation P* 150 Junction temperature Tj 125 Storage temperature range Tstg -55~125 * Mounted on a glass epoxy circuit board of 20 × 20mm, Pad dimension of 4 × 4mm. Unit mW °C °C Electrical Characteristics (See Page 2~3) JEDEC JEITA TOSHIBA Weight: 1.4 mg ― ― 1-1G1A Marking Example 1: 015AZ12-× Example 2: 015AZ12-× Pin Assignment (top view) 1 2001-10-30 015AZ2.0~015AZ12 Electrical Characteristics (Ta = 25°C) Zener Voltage Dynamic Impedance Knee Dynamic Impedance Reverse Current Type No.
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