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015AZ3.9 - Silicon Diode

Download the 015AZ3.9 datasheet PDF. This datasheet also covers the 015AZ2.0 variant, as both devices belong to the same silicon diode family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (015AZ2.0-ToshibaSemiconductor.pdf) that lists specifications for multiple related part numbers.

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015AZ2.0~015AZ12 TOSHIBA Diode Silicon Epitaxial Planar Type 015AZ2.0~015AZ12 Constant Voltage Regulation Applications Unit: mm l Small package l Nominal voltage tolerance about ±2.5% (2.0V~12V) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Power dissipation P* 150 Junction temperature Tj 125 Storage temperature range Tstg -55~125 * Mounted on a glass epoxy circuit board of 20 × 20mm, Pad dimension of 4 × 4mm. Unit mW °C °C Electrical Characteristics (See Page 2~3) JEDEC JEITA TOSHIBA Weight: 1.4 mg ― ― 1-1G1A Marking Example 1: 015AZ12-× Example 2: 015AZ12-× Pin Assignment (top view) 1 2001-10-30 015AZ2.0~015AZ12 Electrical Characteristics (Ta = 25°C) Zener Voltage Dynamic Impedance Knee Dynamic Impedance Reverse Current Type No.
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