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Toshiba Electronic Components Datasheet

1SS399 Datasheet

Silicon Epitaxial Planar Diode

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1SS399 pdf
TOSHIBA Diode Silicon Epitaxial Planar Diode
1SS399
High Voltage, High Speed Switching Applications
1SS399
Unit: mm
Small package
: SC-61
Low forward voltage
: VF = 1.0 V (typ.)
High voltage
: VR = 400 V (min)
Fast reverse recovery time : trr = 0.5 μs (typ.)
Small total capacitance : CT = 2.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse Voltage
VRM
420 V
Reverse voltage
VR 400 V
Maximum (peak) forward current
IFM
300 *
mA
Average forward current
IO
100 *
mA
Surge current (10ms)
IFSM
2* A
Power dissipation
Junction temperature
P 150 mW
JEDEC
Tj 125 °C JEITA
SC-61
Storage temperature range
Tstg 55 to 125 °C TOSHIBA
1-3J1A
Weight: 13 mg (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* : Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current
Total capacitance
Reverse recovery time
Symbol
VF (1)
VF (2)
IR (1)
IR (2)
CT
trr
Test Condition
IF = 10 mA
IF = 100 mA
VR = 300 V
VR = 400 V
VR = 0 V, f = 1 MHz
IF = 10 mA
(Fig.1)
Min Typ. Max Unit
0.8
1.0 1.3
V
― ― 0.05
μA
― ― 0.1
2.5 5.0 pF
0.5 μs
Start of commercial production
1995-11
1 2015-02-23


Toshiba Electronic Components Datasheet

1SS399 Datasheet

Silicon Epitaxial Planar Diode

No Preview Available !

1SS399 pdf
Fig.1 Reverse Recovery Time (trr) Test Circuit
100μs
Equivalent Circuit (top view)
Marking
1SS399
2 2015-02-23


Part Number 1SS399
Description Silicon Epitaxial Planar Diode
Maker Toshiba Semiconductor
Total Page 4 Pages
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