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Toshiba Electronic Components Datasheet

2SA1201 Datasheet

Silicon PNP Transistor

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1201
Voltage Amplifier Applications
Power Amplifier Applications
2SA1201
Unit: mm
High voltage: VCEO = 120 V
High transition frequency: fT = 120 MHz (typ.)
Small flat package
PC = 1 to 2 W (mounted on a ceramic substrate)
Complementary to 2SC2881
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note 1)
Tj
Tstg
120
120
5
800
160
500
1000
150
55 to 150
V
V
V
mA
mA
mW
°C
°C
PW-MINI
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2009-12-21


Toshiba Electronic Components Datasheet

2SA1201 Datasheet

Silicon PNP Transistor

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 120 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
V (BR) EBO IE = 1 mA, IC = 0
hFE
(Note 3)
VCE = 5 V, IC = 100 mA
VCE (sat) IC = 500 mA, IB = 50 mA
VBE VCE = 5 V, IC = 500 mA
fT VCE = 5 V, IC = 100 mA
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note 3: hFE classification O: 80 to 160, Y: 120 to 240
Marking
D
Lot No.
Part No. (or abbreviation code)
Characteristics indicator
Note 4
2SA1201
Min Typ. Max Unit
120
5
0.1
0.1
μA
μA
V
V
80 240
― ― −1.0 V
― ― −1.0 V
120 MHz
― ― 30 pF
Note 4: A line beside a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2009-12-21


Part Number 2SA1201
Description Silicon PNP Transistor
Maker Toshiba Semiconductor
PDF Download

2SA1201 Datasheet PDF





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