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2SC3112 TRANSISTOR

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Description

2SC3112 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3112 For Audio Amplifier and Switching Applications * *

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Applications

* High DC current gain: hFE = 600~3600 High breakdown voltage: VCEO = 50 V High collector current: IC = 150 mA (max) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base

2SC3112 Distributors

📁 Related Datasheet

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  • 2SC3101 - NPN EPITAXIAL PLANAR TYPE TRANSISTOR (Mitsubishi Electric Semiconductor)

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TRANSISTOR Toshiba Semiconductor
Toshiba Semiconductor 2SC3112-like datasheet