Datasheet Summary
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
High-Current Switching Applications
Unit: mm
- -
- Low collector saturation voltage: VCE (sat) = 0.4 V (max) High-speed switching: tstg = 1.0 µs (typ.) plementary to 2SA1452A
Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 80 80 6 12 2 30 150 Unit V V V A A W
JEDEC
°C °C
― ― 2-10R1A
.
- 55 to 150
JEITA TOSHIBA
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