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Toshiba Electronic Components Datasheet

2SD1160 Datasheet

NPN TRANSISTOR

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SD1160
Switching Applications
Suitable for Motor Drive Applications
2SD1160
Unit: mm
High DC current gain
Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA)
Built-in free wheel diode
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 20 V
Emitter-base voltage
VEBO 6 V
Collector current
DC
IC
2
A
Pulse ICP 4
Diode forward surge current (t = 1 s)
IFP
1A
Collector power
dissipation
Ta = 25°C
Tc = 25°C
PC
1
W
10
Junction temperature
Storage temperature range
Tj 150 °C
Tstg
55 to 150
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
TOSHIBA
2-7B1A
Weight: 0.36 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Equivalent Circuit
BASE
COLLECTOR
800 EMITTER
1 2006-11-21


Toshiba Electronic Components Datasheet

2SD1160 Datasheet

NPN TRANSISTOR

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter sustaining voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Emitter-collector forward voltage
ICBO
VCB = 50 V, IE = 0
IEBO
VEB = 5 V, IC = 0
VCEO (SUS) IC = 20 mA, L = 40 mH
hFE (1)
(Note)
VCE = 2 V, IC = 1 A
hFE (2)
VCE (sat)
VBE (sat)
VECF
VCE = 2 V, IC = 2 A
IC = 2 A, IB = 40 mA
IC = 2 A, IB = 40 mA
IE = 1 A, IB = 0
Note: hFE (1) classification O: 100 to 200, Y: 150 to 300
Classification
2SD1160-O
2SD1160-Y
Min Max
100 200
150 300
Marking
D1160
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SD1160
Min Typ. Max Unit
――
1
2.5 6.25 15
20 ― ―
μA
mA
V
100 300
60 ― ―
0.4 0.6
― ― 1.5
― ― 2.0
V
V
V
2 2006-11-21


Part Number 2SD1160
Description NPN TRANSISTOR
Maker Toshiba Semiconductor
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2SD1160 Datasheet PDF






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