2SD1160 Overview
Key Features
- High DC current gain
- Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 mA)
| Part | 2SD1160 |
|---|---|
| Description | NPN TRANSISTOR |
| Category | Transistor |
| Manufacturer | Toshiba |
| Size | 143.22 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| D1163A | Hitachi Semiconductor | 2SD1163A |
| 2SD1163 | Renesas | Silicon NPN Transistor |
| 2SD1163 | Hitachi Semiconductor | NPN TRANSISTOR |
| 2SD1163A | SavantIC | SILICON POWER TRANSISTOR |
| 2SD1163A | Hitachi Semiconductor | NPN TRANSISTOR |