2SD1160
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Switching Applications Suitable for Motor Drive Applications
Unit: mm
- High DC current gain
- Low saturation voltage: VCE (sat) = 0.6 V (max) (IC = 2A, IB = 40 m A)
- Built-in free wheel diode
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 50 V
Collector-emitter voltage
VCEO 20 V
Emitter-base voltage
VEBO 6 V
Collector current
2 A
Pulse ICP 4
Diode forward surge current (t = 1 s)
1A
Collector power dissipation
Ta = 25°C Tc = 25°C
1 W
Junction temperature Storage temperature range
Tj 150 °C
Tstg
- 55 to 150
°C
JEDEC JEITA
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Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
TOSHIBA
2-7B1A...
