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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2009
High Speed Switching Applications Analog Switch Applications
• High input impedance. • Low gate threshold voltage: Vth = 0.5 to 1.5 V • Excellent switching times: ton = 0.06 μs (typ.)
toff = 0.12 μs (typ.) • Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) • Small package • Enhancement-mode
Marking
Equivalent Circuit
2SK2009
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage Gate-source voltage DC drain current Drain power dissipation Channel temperature Storage temperature range
Symbol
Rating
Unit
VDS VGSS
ID PD Tch Tstg
30
V
±20
V
200
mA
200
mW
150
°C
−55 to 150
°C
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1F
Weight: 0.012 g (typ.
2SK2009 Datasheet
