Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
Switching Regulator Applications
- Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.)
- High forward transfer admittance: |Yfs| = 8.5 S (typ.)
- Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
- Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Unit:...
