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Toshiba Electronic Components Datasheet

2SK3633 Datasheet

Silicon N-Channel MOS Type Switching Regulator Applications

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2SK3633 pdf
2SK3633
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (πMOS IV)
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2SK3633
Switching Regulator Applications
Unit: mm
Low drain-source ON-resistance: RDS (ON) = 1.35 Ω (typ.)
High forward transfer admittance: |Yfs| = 5.2 S (typ.)
Low leakage current: IDSS = 100 μA (VDS = 640 V)
Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
Drain-gate voltage (RGS = 20 kΩ)
Gate-source voltage
Drain current
DC (Note 1)
Pulse (t = 1 ms)
(Note 1)
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
VDSS
VDGR
VGSS
ID
IDP
PD
EAS
IAR
EAR
Tch
Tstg
800
800
±30
7
21
150
420
7
15
150
55~150
V
V
V
A
W
mJ
A
mJ
°C
°C
JEDEC
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max Unit
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Rth (ch-c)
Rth (ch-a)
0.833
50
°C/W
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15.7 mH, IAR = 7 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
1 2006-11-10


Toshiba Electronic Components Datasheet

2SK3633 Datasheet

Silicon N-Channel MOS Type Switching Regulator Applications

No Preview Available !

2SK3633 pdf
2SK3633
Electrical Characteristics (Ta = 25°C)
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Gate leakage current
Gate-source breakdown voltage
Drain cutoff current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON-resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn-on time
Fall time
Turn-off time
Total gate charge
Gate-source charge
Gate-drain charge
Symbol
Test Condition
Min Typ. Max Unit
IGSS
VGS = ±25 V, VDS = 0 V
⎯ ⎯ ±10
V (BR) GSS ID = ±10 μA, VGS = 0 V
±30
IDSS
VDS = 640 V, VGS = 0 V
⎯ ⎯ 100
V (BR) DSS ID = 10 mA, VGS = 0 V
800
Vth VDS = 10 V, ID = 1 mA
2.0 4.0
RDS (ON) VGS = 10 V, ID = 3.5 A
1.35 1.7
Yfs
VDS = 20 V, ID = 3.5 A
2.5 5.2
Ciss
Crss
VDS = 25 V, VGS = 0 V, f = 1 MHz
1500
25
Coss
140
tr
10 V
VGS
ID = 3.5 A VOUT
35
0V
ton
50 Ω
RL =
80
114 Ω
tf 50
VDD ∼− 400 V
toff Duty <= 1%, tw = 10 μs
220
μA
V
μA
V
V
Ω
S
pF
ns
Qg
Qgs VDD ∼− 400 V, VGS = 10 V, ID = 7 A
Qgd
35
22 nC
13
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristic
Continuous drain reverse current
(Note 1)
Pulse drain reverse current
(Note 1)
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
IDR
IDRP
VDSF
trr
Qrr
Test Condition
IDR = 7 A, VGS = 0 V
IDR = 7 A, VGS = 0 V,
dIDR/dt = 100 A/μs
Min Typ. Max Unit
⎯⎯ 7 A
⎯ ⎯ 21 A
⎯ ⎯ −1.7 V
1200
ns
11.5
μC
Marking
TOSHIBA
K3633
Part No. (or abbreviation code)
Lot No.
A line indicates a
lead (Pb)-free package or
lead (Pb)-free finish.
2 2006-11-10


Part Number 2SK3633
Description Silicon N-Channel MOS Type Switching Regulator Applications
Maker Toshiba Semiconductor
Total Page 6 Pages
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