Datasheet Details
| Part number | 60N321 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 182.32 KB |
| Description | GT60N321 |
| Datasheet | 60N321-ToshibaSemiconductor.pdf |
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Overview: GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector •.
| Part number | 60N321 |
|---|---|
| Manufacturer | Toshiba |
| File Size | 182.32 KB |
| Description | GT60N321 |
| Datasheet | 60N321-ToshibaSemiconductor.pdf |
|
|
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| Part Number | Description |
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