Datasheet Summary
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1160
Strobe Flash Applications Medium Power Amplifier Applications
2SA1160
Unit: mm
- High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE =
- 1 V, IC =
- 0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE =
- 1 V, IC =
- 4 A)
- Low saturation voltage
: VCE (sat) =
- 0.5 V (max) (IC =
- 2 A, IB =
- 50...
