A1163
2SA1163
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1163
Audio Frequency General Purpose Amplifier Applications
- High voltage: VCEO =
- 120 V
- Excellent h FE linearity: h FE (IC =
- 0.1 m A)/h FE (IC =
- 2 m A)
= 0.95 (typ.)
- High h FE: h FE = 200 to 700
- Low noise: NF = 1d B (typ.), 10d B (max)
- plementary to 2SC2713
- Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
- 120
Collector-emitter voltage
VCEO
- 120
Emitter-base voltage
VEBO
- 5 V
Collector current
- 100 m A
Base current
- 20 m A
Collector power dissipation
PC 150 m W
Junction temperature Storage temperature...
