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Toshiba Electronic Components Datasheet

A1357 Datasheet

2SA1357

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2SA1357
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1357
Strobe Flash Applications
Audio Power Amplifier Applications
Unit: mm
hFE(1) = 100 to 320 (VCE = 2 V, IC = 0.5 A)
hFE(2) = 70 (min) (VCE = 2 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 1.0 V (max)
(IC = 4 A, IB = 0.1 A)
High power dissipation: PC = 10 W (Tc = 25°C),
PC = 1.5 W (Ta = 25°C)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
35
20
8
5
8
1
1.5
10
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.)
Note 1: Pulse test: Pulse width = 10 ms (max)
Duty cycle = 30% (max)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2006-11-09
Datasheet pdf - http://www.DataSheet4U.net/


Toshiba Electronic Components Datasheet

A1357 Datasheet

2SA1357

No Preview Available !

www.DataSheet.co.kr
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 35 V, IE = 0
IEBO
VEB = 8 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
(Note 3)
VCE = 2 V, IC = 0.5 A
hFE (2)
VCE (sat)
VCE = 2 V, IC = 4 A
IC = 4 A, IB = 0.1 A
VBE VCE = 2 V, IC = 4 A
fT VCE = 2 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Note 3: hFE (1) classification O: 100 to 200, Y: 160 to 320
Marking
2SA1357
Min Typ. Max Unit
― ― −100 μA
― ― −100 μA
20
V
100 320
70 ― ―
― ― −1.0 V
― ― −1.5 V
170 MHz
62 pF
Lot No.
A1357
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Characteristics indicator
Part No. (or abbreviation code)
2 2006-11-09
Datasheet pdf - http://www.DataSheet4U.net/


Part Number A1357
Description 2SA1357
Maker Toshiba Semiconductor
Total Page 4 Pages
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