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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
2SA1431
Strobe Flash Applications Medium Power Amplifier Applications
2SA1431
Unit: mm
• High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)
• Low saturation voltage: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = −0.1 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC
Collector current
Pulsed
(Note 1)
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC
ICP
IB PC Tj Tstg
−35 −20 −8 −5
−8
−0.
A1431 Datasheet
