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A2070 - 2SA2070

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Other Datasheets by Toshiba Semiconductor

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    TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2070 High-Speed Switching Applications DC-DC Converter Applications 2SA2070 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = -0.1 A) • Low collector-emitter saturation voltage: VCE (sat) =- 0.20 V (max) • High-speed switching: tf = 70 ns (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation DC t = 10 s Junction temperature Storage temperature range VCBO VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg −50 −50 −7 −1.0 −2.0 −0.1 1.0 2.0 150 −55 to 150 V V V A A W °C °C JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (typ.
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