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TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SB1375
Audio Frequency Power Amplifier
2SB1375
Unit: mm
• Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A)
• High power dissipation: PC = 25 W (Tc = 25°C) • Collector metal (fin) is covered with mold resin
• Complementary to 2SD2012
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
−60 −60 −7 −3 −0.5 2.0 25 150 −55 to 150
V V V A A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g.
B1375 Datasheet
