TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
Power Amplifier Applications
Vertical Output Applications
Absolute Maximum Ratings (Ta = 25°C)
VCBO 150 V
VCEO 150 V
VEBO 5 V
IC 1.5 A
IB 0.5 A
Ta = 25°C
Tc = 25°C
Storage temperature range
−55 to 150
Note1: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
Weight: 1.7 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).