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C2073A - Silicon NPN Transistor

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Part number C2073A
Manufacturer Toshiba
File Size 135.87 KB
Description Silicon NPN Transistor
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2SC2073A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2073A Power Amplifier Applications Vertical Output Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage VCBO 150 V Collector-emitter voltage VCEO 150 V Emitter-base voltage VEBO 5 V Collector current IC 1.5 A Base current IB 0.5 A Collector power dissipation Junction temperature Ta = 25°C Tc = 25°C PC Tj 2.0 W 25 150 °C 1.Base 2.Collector 3.Emitter Storage temperature range Tstg −55 to 150 °C JEDEC ― Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
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