• Part: C2669
  • Manufacturer: Toshiba
  • Size: 291.14 KB
Download C2669 Datasheet PDF
C2669 page 2
Page 2
C2669 page 3
Page 3

C2669 Description

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: Gpe = 30dB (typ.) (f = 10.7 MHz) · Remended for FM IF, OSC stage and AM CONV, IF stage. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.