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C5355. For precise diagrams, tables, and layout, please refer to the original PDF.
2SC5355 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SC5355 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications...
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ications Switching Regulator Applications DC-DC Converter Applications • • • Excellent switching times: tr = 0.5 µs (max), tf = 0.3 µs (max) High collector breakdown voltage: VCEO = 400 V High DC current gain: hFE = 20 (min) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 600 400 7 5 7 1 1.5 25 150 −55~150 Unit V V V A A JEDEC W °C °C ― ― 2-7B5A JEITA TOSHIBA Weight: