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www.DataSheet4U.com TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC6040 High-Speed and High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications 2SC6040 Unit: mm • High-speed switching: tf = 0.2 µs (max) (IC = 0.3 A) • High breakdown voltage: VCES = 800 V, VCEO = 410 V Maximum Ratings (Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature range Symbol VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg Rating 800 800 410 8 1.0 2.0 0.5 1.0 150 −55 to 150 Unit V V V V A A W °C °C 1. Base 2. Collector 3.
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