* (1) Suitable for high working voltage line. (VRWM ≤ 18.5 V) (2) Protects devices with its high ESD performance. (VESD = ±15 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.2 Ω (typ.)) (4) Snapback characteristic
DF2B20M4SL Datasheet (398.17 KB)
DF2B20M4SL
Toshiba ↗ Semiconductor
398.17 KB
Esd protection diodes.
ESD Protection Diodes Silicon Epitaxial Planar DF2B20M4SL DF2B20M4SL 1. General The DF2B20M4SL is a bidirectional TVS diode with high VRWM(18.5V) de.
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