* (1) Suitable for use with a 3.3 V signal line. (VRWM ≤ 3.6 V) (2) Protects devices with its high ESD performance. (VESD = ±20 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.5 Ω (typ.)) (4) Snapback characterist
DF2B5M4SL Datasheet (349.76 KB)
DF2B5M4SL
Toshiba ↗ Semiconductor
349.76 KB
Esd protection diodes.
ESD Protection Diodes Silicon Epitaxial Planar DF2B5M4SL DF2B5M4SL 1. General The DF2B5M4SL is a TVS diode (ESD protection diode) protects semicondu.
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